Epitaxial Single-Crystal ScAlN on 4H-SiC for High-Velocity, Low-Loss SAW Devices
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2020-01-01 |
| Authors | Vikrant J. Gokhale, Brian P. Downey, Matthew T. Hardy, Eric N. Jin, J.A. Roussos |
| Institutions | National Academies of Sciences, Engineering, and Medicine, United States Naval Research Laboratory |
| Citations | 18 |
Abstract
Section titled âAbstractâThis report presents some of the first experimental characterization of surface acoustic wave (SAW) devices using single-crystal ScAlN epitaxially grown on SiC. Due to the excellent wave guiding provided by the ScAlN/SiC heterostructure, SAW phase velocities greater than 12,000 m/s are measured, higher than comparable ScAlN SAW devices on other substrates. The phase velocity dispersion for measured devices compares well with simulated values. We observe up to k <sup xmlns:mml=âhttp://www.w3.org/1998/Math/MathMLâ xmlns:xlink=âhttp://www.w3.org/1999/xlinkâ>2</sup> =0.52% even for very small thickness to wavelength ratios ( ). We show that epitaxial ScAlN/SiC can achieve extremely low SAW propagation loss ( ), comparable to state-of-the-art piezoelectric/diamond SAW devices, and are linear at CW RF power levels up to â30 dBm (1W), with 1 dB gain compression at 34 dBm and an IIP3 of 45 dBm.
Tech Support
Section titled âTech SupportâOriginal Source
Section titled âOriginal SourceâReferences
Section titled âReferencesâ- 2016 - Enhancement of effective electromechanical coupling factor by mass loading in layered surface acoustic wave device structures [Crossref]
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- 0 - Single Crystalline ScAlN Surface Acoustic Wave Resonators with Large Figure of Merit ($\mathrm{Q}\times \mathrm{k}\square ^{2}$)