Quantum oscillations in diamond field-effect transistors with a h-BN gate dielectric
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-12-02 |
| Journal | Physical Review Materials |
| Authors | Yosuke Sasama, Katsuyoshi Komatsu, Satoshi Moriyama, Masataka Imura, Shiori Sugiura |
| Institutions | University of Tsukuba, National Institute for Materials Science |
| Citations | 23 |
Abstract
Section titled āAbstractāDiamond has attracted attention as a next-generation semiconductor because of\nits various exceptional properties such as a wide bandgap and high breakdown\nelectric field. Diamond field effect transistors, for example, have been\nextensively investigated for high-power and high-frequency electronic\napplications. The quality of their charge transport (i.e., mobility), however,\nhas been limited due to charged impurities near the diamond surface. Here, we\nfabricate diamond field effect transistors by using a monocrystalline hexagonal\nboron nitride as a gate dielectric. The resulting high mobility of charge\ncarriers allows us to observe quantum oscillations in both the longitudinal and\nHall resistivities. The oscillations provide important information on the\nfundamental properties of the charge carriers, such as effective mass,\nlifetime, and dimensionality. Our results indicate the presence of a\nhigh-quality two-dimensional hole gas at the diamond surface and thus pave the\nway for studies of quantum transport in diamond and the development of low-loss\nand high-speed devices.\n
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 1984 - Magnetic Oscillations in Metals [Crossref]