Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance*
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-06-01 |
| Journal | Chinese Physics B |
| Authors | K. Liu, Jiwen Zhao, Huarui Sun, Huaixin Guo, Bing Dai |
| Institutions | Harbin Institute of Technology, Ministry of Industry and Information Technology |
| Citations | 13 |
Abstract
Section titled āAbstractāThermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet (UV) lasers are employed to directly heat and sense the GaN epilayers in the transient thermoreflectance (TTR) measurement, obtaining important thermal transport properties in different GaN heterostructures, which include a diamond thin film heat spreader grown on GaN. The UV TTR technique enables rapid and non-contact thermal characterization for GaN wafers.