Radiative lifetime of boron-bound excitons in diamond
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2019-04-01 |
| Journal | Applied Physics Letters |
| Authors | Yoshiki Kubo, Solange Temgoua, Riadh Issaoui, Julien Barjon, N. Naka |
| Institutions | Centre National de la Recherche Scientifique, Université de Versailles Saint-Quentin-en-Yvelines |
| Citations | 8 |
Abstract
Section titled âAbstractâWe report the ultraviolet absorption of boron-bound excitons at low temperature in a single crystal of diamond grown by chemical vapor deposition. The no-phonon (NP) and phonon-assisted lines are identified by comparison with cathodoluminescence. The oscillator strength of the NP lines was found to be 3.0 Ă 10â5 based on the measured absorption cross-section. This value is discussed in terms of the scaling law known for doped silicon, where the oscillator strength varies proportionally to Eloc2.5, with Eloc being the localization energy of excitons on acceptors. More importantly, we also could assess the oscillator strength of the dominant transverse optical phonon-assisted transition, which is found to be equal to 1.2Ă10â3. The associated radiative lifetime for the boron-bound exciton is 1.8 ÎŒs, which is much longer than the non-radiative Auger lifetime that governs its decay.
Tech Support
Section titled âTech SupportâOriginal Source
Section titled âOriginal SourceâReferences
Section titled âReferencesâ- 1994 - Properties and Growth of Diamond