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6CCVD Research

Numerical Simulations of Diamond Cross-Section Germanium Nanowire Transistors for CMOS Compatible Assembly

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2018-10-01
AuthorsGuanqing Wang, Hao-Yu Kong, Liang-Kui Liu, Lei Sun
InstitutionsInstitute of Microelectronics, Peking University

Abstract

Section titled “Abstract”

The properties of germanium nanowire transistors (DNWTs) with diamond cross section are studied numerically. Ge nanowire channels can be obtained by three isotropic/anisotropic etching steps. The working mechanism of DNWTs and the influence of physical parameters are studied. The results show that the current of DNWT is mainly concentrated in the center of the channel and extends to the corner at higher gate voltage. DNWT has a larger cross section than the corresponding triangular nanowires, so it has a higher leakage current. The moderate design of DNWT is less affected by the short channel effect and the subthreshold slope is lower.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
  1. 2015 - VLSI Symp

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