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6CCVD Research

Improvement Of The Harmonic Distortion By Using Diamond Mosfet

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2018-08-01
AuthorsMarcelo Machado Aoyama, M. Estrada, A. Cerdeira, Jacobus W. Swart, Salvador Pinillos Gimenez
InstitutionsUniversidade Estadual de Campinas (UNICAMP), Hospital de ClĆ­nicas da Unicamp

Abstract

Section titled ā€œAbstractā€

The Harmonic Distortion is an important merit figure for low-power low-voltage analog Complementary MetalOxide-Semiconductor (CMOS) integrated circuits (ICs) applications. This paper performs an experimental comparative study of the Harmonic Distortion between the Diamond (Hexagonal gate shape, DM) and Conventional MOSFET (Rectangular gate geometry, CM) by using the commercial 0.18 Ī¼m Bulk CMOS ICs manufacturing process from TSMC. The Integral Function Method is used to obtain the total harmonic distortion (THD) of MOSFETs. The main results of this work show that the Diamond layout style for MOSFETs, with alpha (Ī±) angle equal to 135Ā° can improve the THD about 22% as compared to the one measured in CM counterpart.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2012 - The Protons Radiation-Robustness Of Integrated Circuits By Using The Diamond Layout Style

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