Diamond Diode Structures Based on Homoepitaxial Films
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-07-01 |
| Journal | Journal of Communications Technology and Electronics |
| Authors | N. B. Rodionov, A. F. Palā, A. P. Bolshakov, Victor Ralchenko, R.A. Khmelnitskiy |
| Institutions | P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Troitsk Institute for Innovation and Fusion Research |
| Citations | 1 |
Abstract
Section titled āAbstractā(m-i-p)-Structures with high-resistance epitaxial i-layers are fabricated on heavily doped p+-type substrates with platinum contacts. The structures are studied using several methods: optical and electron microscopy and luminescence, and electrophysical (C-V and I-V characteristics) methods and tested as detectors of ionizing radiation. It is shown that the (m-i-p)-structures are promising for development of several electronic devices (high-voltage diodes, detectors of ionizing radiation, and photovoltaic devices).
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2008 - Physics and Applications of CVD Diamond [Crossref]