High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-03-05 |
| Journal | Applied Physics Letters |
| Authors | T. T. Pham, M. GutiƩrrez, CƩdric Masante, Nicolas Rouger, David Eon |
| Institutions | Laboratoire Plasma et Conversion dāEnergie, Centre National de la Recherche Scientifique |
| Citations | 24 |
Abstract
Section titled āAbstractāIn this letter, we report on the improvement of gate controlled Al2O3/(100) boron doped (B-doped) oxygen-terminated diamond (O-diamond) Metal Oxide Semiconductor Capacitors using 40 nm thick Al2O3 deposited by Atomic Layer Deposition at 380 Ā°C and then annealed at 500 Ā°C in vacuum conditions. The high quality of Al2O3 and an Al2O3/diamond interface is verified thanks to electrical measurements and Transmission Electron Microscopy (TEM) measurements. A density of interface states lower than 1012 eVā1 cmā2 is measured from the flat-band regime to the depletion regime. The shift of the flat-band voltage and the leakage current through the oxide are significantly reduced in good agreement with the mono-crystalline character of the Al2O3 layer revealed by TEM.