Fabrication and characterization of physically defined quantum dots on a boron-doped silicon-on-insulator substrate
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2018-03-02 |
| Journal | Japanese Journal of Applied Physics |
| Authors | Seiya Mizoguchi, Naoki Shimatani, Mizuki Kobayashi, Takaomi Makino, Yu Yamaoka |
| Institutions | Tokyo Institute of Technology |
| Citations | 1 |
Abstract
Section titled âAbstractâWe study hole transport properties in physically defined p-type silicon quantum dots (QDs) on a heavily doped silicon-on-insulator (SOI) substrate. We observe Coulomb diamonds using single QDs and estimate the charging energy as âź1.6 meV. We obtain the charge stability diagram of double QDs using single QDs as a charge sensor. This is the first demonstration of charge sensing in p-type heavily doped silicon QDs. For future time-resolved measurements, we apply radio-frequency reflectometry using impedance matching of LC circuits to the device. We observe the resonance and estimate the capacitance as âź0.12 pF from the resonant frequency. This value is smaller than that of the devices with top gates on nondoped SOI substrate. This indicates that high-frequency signals can be applied efficiently to p-type silicon QDs without top gates.