Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-02-16 |
| Journal | Japanese Journal of Applied Physics |
| Authors | Tsubasa Matsumoto, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi |
| Institutions | Kanazawa University, National Institute for Materials Science |
| Citations | 14 |
Abstract
Section titled āAbstractāThe electrical properties of Al2O3/p-type diamond (111) MOS capacitors were studied with the goal of furthering diamond-based semiconductor research. To confirm the formation of an inversion layer in the p-type diamond body, an n-type layer for use as a minority carrier injection layer was selectively deposited onto p-type diamond. To form the diamond MOS capacitors, Al2O3 was deposited onto OH-terminated diamond using atomic layer deposition. The MOS capacitor showed clear inversion capacitance at 10 Hz. The minority carrier injection from the n-type layer reached the inversion n-channel diamond MOS field-effect transistor (MOSFET). Using the high-low frequency capacitance method, the interface state density, Dit, within an energy range of 0.1-0.5 eV from the valence band edge energy, Ev, was estimated at (4-9) Ć 1012 cmā2 eVā1. However, the high Dit near Ev remains an obstacle to improving the field effect mobility for the inversion p-channel diamond MOSFET.