Properties of planar structures based on Policluster films of diamond and AlN
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-01-01 |
| Journal | IOP Conference Series Materials Science and Engineering |
| Authors | Š. F. Belyanin, Š. Š. ŠŃŃŠ½ŠøŠŗŠ¾Š², Š”.Š. ŠŠ°Š»ŠøŠ¼Š¾Š², Alexander Bagdasarian |
| Institutions | MIREA - Russian Technological University, Central Research Institute for Machine Building |
| Citations | 2 |
Abstract
Section titled āAbstractāAlN films doped with zinc were grown on Si substrates by RF magnetron reactive sputtering of a compound target. Policluster films of diamond doped with boron were formed on layered Si/AlN substrates from the gas phase hydrogen and methane, activated arc discharge. By electron microscopy, X-ray diffraction and Raman spectroscopy the composition and structure of synthetic policluster films of diamond and AlN films were studied. Photovoltaic devices based on the AlN/PFD layered structure are presented.