Interfacial energy barrier height of Al2O3/H-terminated (111) diamond heterointerface investigated by X-ray photoelectron spectroscopy
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-10-02 |
| Journal | Applied Physics Letters |
| Authors | AurƩlien MarƩchal, Y. Kato, Meiyong Liao, Satoshi Koizumi |
| Institutions | National Institute for Materials Science, National Institute of Advanced Industrial Science and Technology |
| Citations | 8 |
Abstract
Section titled āAbstractāThe interfacial band configuration of the high-Īŗ dielectric Al2O3 deposited at 120 āC by atomic layer deposition (ALD) on boron- and phosphorus-doped hydrogen-terminated (111) diamond was investigated. Performing X-ray photoelectron spectroscopy measurements of core level binding energies and valence band maxima values, the valence band offsets of both heterojunctions are found to be ĪEV = 1.8 eV and ĪEV = 2.7 eV for Al2O3/H(111)p and Al2O3/H(111)n, respectively. The ALD Al2O3 bandgap energy was measured from the O 1s photoelectron energy loss spectra to be EGAl2O3=7.1 eV. The interfacial band diagram configuration is found to be of type II for both Al2O3/H(111)p and Al2O3/H(111)n heterostructures having conduction band offsets of ĪEC = 0.2 eV and ĪEC = 1.1 eV, respectively. The use of doped (111) hydrogen-terminated diamond for developing future diamond metal-oxide-semiconductor field-effect transistors is discussed.