Diamond Phase (sp3-C) Rich Boron-Doped Carbon Nanowalls (sp2-C) - Physicochemical and Electrochemical Properties
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-09-05 |
| Journal | The Journal of Physical Chemistry C |
| Authors | MichaÅ Sobaszek, Katarzyna Siuzdak, Jacek Ryl, MirosÅaw Sawczak, Sanju Gupta |
| Institutions | Institute of Fluid Flow-Machinery, Polish Academy of Sciences |
| Citations | 74 |
Abstract
Section titled āAbstractāThe growth of B-CNW with different boron doping levels controlled by the [B]/[C] ratio in plasma, and the influence of boron on the obtained materialās structure, surface morphology, electrical properties, and electrochemical parameters, such as āĪE and kĀ°, were investigated. The fabricated boron-doped carbon nanowalls exhibit activity toward ferricyanide redox couple, reaching the peak separation value of only 85 mV. The flatband potential and the concentration of boron carriers were estimated in the B-CNW samples using the Mott-Schottky relationship. It was shown that the vertically oriented carbon planes are characterized by p-type conductivity and very high hole-acceptor concentration (3.33 Ć 1023 cm-3 for a highly doped sample), which provides high electrical conductivity. The enhanced electrochemical performance of B-CNWs electrodes is an advantageous feature that can be applied in ultrasensitive detection or energy storage devices.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2010 - Carbon Nanowalls [Crossref]