A quantum spectrum analyzer enhanced by a nuclear spin memory
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2017-08-22 |
| Journal | npj Quantum Information |
| Authors | T. Rosskopf, Jonathan Zopes, J. M. Boss, Christian L. Degen |
| Institutions | ETH Zurich |
| Citations | 68 |
| Analysis | Full AI Review Included |
Technical Analysis & Documentation: Memory-Enhanced Quantum Spectrum Analyzer
Section titled âTechnical Analysis & Documentation: Memory-Enhanced Quantum Spectrum AnalyzerâExecutive Summary
Section titled âExecutive SummaryâThis research successfully demonstrates a significant advancement in quantum sensing resolution using a two-qubit Nitrogen-Vacancy (NV) center sensor in single-crystal diamond (SCD). By utilizing the 15N nuclear spin as a long-lived memory qubit, the sensor overcomes the primary Fourier-limit imposed by the electronic spinâs relaxation time ($T_{1}$).
- Record Resolution Achieved: Spectral resolution of 19 Hz, corresponding to an ultra-precise 2.9 ppm for external AC magnetic fields.
- Performance Gain: Achieved an improvement in spectral resolution up to 100-fold compared to conventional dynamical decoupling and correlation spectroscopy methods without nuclear memory.
- Memory Functionality: Extended the maximum correlation waiting time ($t$) to 45 ms by storing the electronic qubit state in the nuclear spin, significantly exceeding the electronic $T_{1}$ time (~0.5 ms).
- Material Requirement: Requires high-quality, electronic-grade SCD wafers, typically isotopically pure (<0.01% 13C), with ultra-shallow NV center implantation (3-10 nm depth).
- Application Demonstrated: Successfully applied the memory-assisted protocol to high-resolution nanoscale 13C Nuclear Magnetic Resonance (NMR) spectroscopy, achieving line widths of 190 Hz (74 ppm).
Technical Specifications
Section titled âTechnical SpecificationsâData extracted from the realization of the memory-enhanced quantum spectrum analyzer.
| Parameter | Value | Unit | Context |
|---|---|---|---|
| Best Spectral Resolution | 19 | Hz | For external AC test signals (~2.9 ppm) |
| Resolution Improvement Factor | Up to 100 | Fold | Compared to non-memory protocols |
| Maximum Correlation Time ($t$) | 45 | ms | Limited by nuclear $T_{1,n}$ |
| Nuclear Memory Lifetime ($T_{1,n}$) | 52 | ms | Measured without laser illumination |
| Electronic Relaxation Time ($T_{1}$) | ~0.5 | ms | Limits resolution without nuclear memory |
| 13C NMR Line Width | 190 | Hz | Corresponding to ~74 ppm |
| NV Implantation Depth (Shallow) | 3-10 | nm | Created via 5 keV 15N+ ion implantation |
| DC Bias Magnetic Field | 320 | mT | Used for $T_{1,n}$ measurements |
| Electronic Spin Rabi Frequency | 20-30 | MHz | Achieved using selective MW pulses |
| 15N Nuclear Spin Rabi Frequency | 10-30 | kHz | Enhanced by hyperfine interaction |
| NV Center Density Control | Two types used: 1.1% 13C (natural abundance) and <0.01% 13C (isotopically pure) | % | Material choice for noise control |
Key Methodologies
Section titled âKey MethodologiesâThe two-qubit sensor protocol hinges on advanced material engineering and precise microwave (MW) and radio frequency (RF) control sequences.
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Diamond Material Preparation:
- Utilized electronic-grade SCD, including isotopically pure material (<0.01% 13C) to minimize environmental spin noise (13C bath).
- Wafers were subjected to ion implantation (5 keV 15N+) to create a shallow NV layer, followed by 800 °C annealing.
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Surface Engineering:
- Achieved ultra-shallow NV depths (3-5 nm) via an oxygen etch at ~550 °C, crucial for nanoscale sensing applications.
- Final surface cleaning was performed via baking at 465 °C in air.
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Qubit Control and Initialization:
- The electronic spin was initialized into the |0e> state using 532 nm laser excitation.
- MW pulses (700 ns, ~0.7 MHz Rabi frequency) and RF pulses (20-50 ”s) were applied via a coplanar waveguide structure to selectively address the resolved hyperfine transitions.
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Memory Gate Implementation (Store/Retrieve):
- Store and retrieve operations were implemented using sequences of controlled-NOT (c-NOT) gates (based on selective spin rotations).
- The state information was transferred from the short-lived electronic spin to the long-lived 15N nuclear spin ($T_{1,n} >> T_{1}$).
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Enhanced Readout:
- The nuclear memory allowed for repeated, non-destructive readouts (up to $n \approx 1000$), significantly enhancing the signal readout efficiency and reducing overall acquisition time.
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Spectral Drift Correction:
- To enable long-term, high-resolution measurements (up to 48 hours total acquisition time), a tracking system was implemented to monitor and post-correct frequency drifts caused by temperature-induced changes in the external bias magnetic field (EPR tracking).
6CCVD Solutions & Capabilities
Section titled â6CCVD Solutions & Capabilitiesâ6CCVD is uniquely positioned to supply the advanced MPCVD diamond materials and engineering services required to replicate and extend this pioneering research in high-resolution quantum spectroscopy and nanoscale NMR. Our materials ensure the ultra-low defect concentration and tailored isotopic purity critical for maximizing qubit coherence times.
Applicable Materials for NV Center Qubit Research
Section titled âApplicable Materials for NV Center Qubit ResearchâTo achieve the long $T_{1}$ and $T_{2}$ times necessary for sub-100 Hz spectral resolution, material quality and isotopic purity are paramount.
| Requirement from Paper | 6CCVD Material Specification | Engineering Benefit |
|---|---|---|
| Isotopically Pure Host Material | Ultra-Low 13C SCD Wafers | We offer isotopically purified single-crystal diamond (<100 ppm 13C), essential for minimizing the intrinsic nuclear magnetic noise bath and enabling long coherence times ($T_{2}$) for high-resolution spectroscopy. |
| Electronic-Grade Quality | Optical Grade SCD (Ra < 1 nm) | Our SCD material is guaranteed to be electronic-grade, minimizing bulk defects and achieving surface polishing roughness $R_{a}$ < 1 nm, which is critical for preserving qubit integrity in shallow NV centers (3-10 nm). |
| Specialized NV Creation | Custom Ion Implantation Support (15N) | We partner with specialized facilities to provide SCD wafers pre-treated with custom, high-dose, shallow 15N implantation, ensuring a robust density of target NV centers for sensor array development. |
| Non-Planar Sensing Devices | Polycrystalline Diamond (PCD) Plates | For applications requiring larger sensing areas, 6CCVD supplies inch-size PCD plates up to 125 mm, which can be polished to $R_{a}$ < 5 nm, suitable for less coherence-sensitive, yet high-throughput, bulk spectroscopy. |
Customization Potential
Section titled âCustomization PotentialâThe experimental setup utilized precise control structures integrated onto the diamond surface. 6CCVD offers in-house services to expedite device fabrication:
- Custom Metalization: We provide internal capability for depositing thin-film metals (Au, Pt, Pd, Ti, W, Cu) required for fabricating the coplanar waveguide transmission lines and control electrodes necessary for delivering selective MW and RF pulses to the NV centers.
- Precision Machining: 6CCVD provides custom dimensions and laser cutting/dicing services for plates/wafers up to 125 mm, ensuring the diamond sensor chip fits precisely into existing confocal microscope and magnet setups (e.g., matching the 320 mT high-field setup used here).
- Substrate Thickness: We supply robust substrates up to 10 mm thick, providing the mechanical stability required for experiments operating under high magnetic bias fields and cryogenic conditions.
Engineering Support
Section titled âEngineering SupportâThis research paves the way for advanced quantum register development and nanoscale detection of single molecules. 6CCVDâs in-house PhD team can assist researchers and technical engineers with material selection, surface preparation protocols (including oxygen etching), and isotopic optimization for similar nanoscale NMR and quantum sensing projects. We ensure that the diamond substrate is optimized for the intended NV creation methodology and final device performance metrics (e.g., $T_{1,n}$ optimization).
Call to Action: For custom specifications or material consultation regarding high-resolution quantum sensing or 15N implantation projects, visit 6ccvd.com or contact our engineering team directly. We offer global shipping (DDU default, DDP available) for expedited delivery of critical materials.
View Original Abstract
Abstract We realize a two-qubit sensor designed for achieving high-spectral resolution in quantum sensing experiments. Our sensor consists of an active âsensing qubitâ and a long-lived âmemory qubitâ, implemented by the electronic and the nitrogen-15 nuclear spins of a nitrogen-vacancy center in diamond, respectively. Using state storage times of up to 45 ms, we demonstrate spectroscopy of external ac signals with a line width of 19 Hz (âŒ2.9 ppm) and of carbon-13 nuclear magnetic resonance signals with a line width of 190 Hz (âŒ74 ppm). This represents an up to 100-fold improvement in spectral resolution compared to measurements without nuclear memory.