The investigation of boron-doped diamond absorbance spectrum
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2017-01-01 |
| Journal | Journal of Physics Conference Series |
| Authors | A.S. Aksenova, A.A. Altuhov, E. V. Ryabeva, V. T. Samosadnyi, Đ. ĐĄ. ЀДŃĐ”ĐœĐșĐŸ |
| Institutions | National Research Nuclear University MEPhI, Russian Venture Company |
| Citations | 1 |
| Analysis | Full AI Review Included |
Technical Documentation & Analysis: Boron-Doped Diamond Absorbance
Section titled âTechnical Documentation & Analysis: Boron-Doped Diamond AbsorbanceâGenerated for 6CCVD, specializing in high-purity MPCVD diamond materials.
Executive Summary
Section titled âExecutive SummaryâThis research investigates the infrared (IR) absorbance spectrum of boron-doped diamond (BDD) films to assess their suitability for wide-spectral photosensitive equipment, bridging the Ultra Violet (UV) and Infrared (IR) detection ranges.
- Core Value Proposition: BDD is confirmed as a viable material for photodetectors operating in the average infrared spectral range, leveraging the shallow energy levels introduced by p-type boron doping.
- Target Application: Development of multispectral observation devices and robust solid-state electronics for UV and Vacuum UV (VUV) ranges (190-250 nm), extending into the mid-IR range.
- Critical Spectroscopy Findings: Specific IR absorption peaks (7.75, 4.07, 3.57, 3.41, 2.68, 2.44 ”m) were identified, corresponding to boron acceptor ionization (3.41 ”m / 0.36 eV) and transitions to excitation levels.
- Atmospheric Alignment: Multiple identified absorbance peaks (2.44 ”m, 3.57 ”m, 4.07 ”m) directly correspond to known atmospheric transparency windows, maximizing detector effectiveness for real-world sensing.
- Engineering Challenge: Optimization of the boron doping level is essential to achieve the necessary compromise between maximizing detector sensitivity and maintaining high charge carrier mobility (speed capability).
- Material Specification: Samples used were thin BDD plates (310-345 ”m thick) cut on the (001) plane, exhibiting a median neutral boron concentration of (0.9 ± 0.1) x 1017 cm-3.
Technical Specifications
Section titled âTechnical SpecificationsâThe following hard data points were extracted from the investigation of the boron-doped diamond films:
| Parameter | Value | Unit | Context |
|---|---|---|---|
| Sample Type | Boron-Doped Diamond (BDD) | N/A | Thin films, HPHT grown, (001) cut |
| Film Thickness Range | 310-345 | ”m | Used for transmission measurements |
| Median Boron Concentration | (0.9 ± 0.1) x 1017 | cm-3 | Neutral p-type boron doping |
| UV Sensitivity Range | 190-250 | nm | Key advantage for photodetectors |
| IR Measurement Range | 400-7000 | cm-1 | Vacuum IR Fourier Transform Spectrometer |
| Boron Acceptor Ionization Peak | 3.41 | ”m | Corresponds to 0.36 eV energy level |
| IR Transparency Window Match 1 | 2.44 | ”m | Aligns with 2.0-2.5 ”m atmospheric window |
| IR Transparency Window Match 2 | 3.57 / 4.07 | ”m | Aligns with 3.0-4.2 ”m atmospheric window |
| Electron Mobility (Undoped) | <2500 | cm2/V·s | High mobility property of diamond |
| Thermal Conductivity (Undoped) | 2000 | W/(m·K) | Superior thermal properties |
| Polishing Plane | (001) | N/A | Crystallography plane for sample cutting |
Key Methodologies
Section titled âKey MethodologiesâThe experimental procedure focused on characterizing the optical absorption properties of p-type diamond material grown using high-pressure high-temperature (HPHT) methods.
- Material Growth and Preparation:
- Boron-doped diamond films were grown via HPHT, resulting in a typical zonal structure with varying impurity capture across different growth sectors ({001}, {111}, {110}).
- Thin diamond plates were cut in the (001) crystallography plane and polished to achieve a consistent thickness range (310-345 ”m).
- Spectroscopic Measurement Setup:
- Transmission spectra were measured using a vacuum infrared Fourier transform spectrometer.
- The spectral range investigated was 400-7000 cm-1.
- Diaphragm Control:
- Diaphragm diameters of 1 mm and 2 mm were employed during measurements. This sampling technique ensured that the collected light covered sections containing multiple growth sectors with varied impurity content.
- Data Processing:
- The BDD absorbance spectrum was derived by deducting the transmission spectrum of a reference pure Type IIa diamond sample, isolating the boron-related absorption features.
6CCVD Solutions & Capabilities
Section titled â6CCVD Solutions & Capabilitiesâ6CCVD provides the high-quality MPCVD materials necessary to replicate and advance this research, offering significant advantages in doping uniformity and large-area scaling compared to the HPHT samples utilized in the paper. Our MPCVD process ensures highly controlled, reproducible BDD films critical for optimizing the sensitivity-speed trade-off required for next-generation detectors.
| Applicable Materials & Requirements | 6CCVD Solution & Specifications | Sales Advantage |
|---|---|---|
| P-Type Doping (Boron-Doped Diamond) | Heavy Boron-Doped PCD or Custom BDD SCD wafers. We achieve superior doping homogeneity and precise activation levels via MPCVD. | Uniformity eliminates performance variations caused by HPHTâs zonal growth sectors, ensuring consistent spectral response across the detector surface. |
| Precise Thickness Control | MPCVD films available from 0.1 ”m (thin film sensors) up to 500 ”m (thick films) on custom substrates (up to 10 mm). | Meet the exact path length requirements (e.g., 310-345 ”m) for optimized spectral absorbance calibration and device integration. |
| Substrate Orientation | Optical grade SCD substrates available in standard (001), (100), and (111) orientations, ready for homoepitaxial BDD growth. | Provides the required (001) plane for maximizing photoelectric efficiency and charge carrier collection pathways. |
| Sensor Scale-Up | Custom dimensions: PCD and SCD plates/wafers up to 125 mm. | Enables researchers to transition from small experimental HPHT cuts to industrially relevant, large-area wide-spectral photodetectors. |
| Device Integration (Metal Contacts) | Internal Metalization Capability: Customized deposition of Au, Pt, Pd, Ti, W, and Cu layers. | Supports immediate, in-house fabrication of reliable Ohmic or Schottky contacts required for photodetector operation (current extraction). |
| Surface Finish (Optical Quality) | Advanced polishing services achieving surface roughness Ra < 1 nm (SCD) and Ra < 5 nm (Inch-size PCD). | Essential for high-performance optical equipment and minimizing scatter in UV/IR transmission measurements. |
Engineering Support: 6CCVDâs in-house PhD team provides specialized consultation on material selection and doping optimization for UV, VUV, and IR detection projects. We specifically assist clients in designing BDD doping recipes that achieve the optimal balance between charge carrier mobility and detector sensitivity for your specific application requirements.
For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly. We ship globally (DDU default, DDP available).
View Original Abstract
The trend of using of radiation with shorter wave length in leading high technological processes demands the detected search of materials for the solid-state electronics equipment and optical systems of an ultra violet and vacuum ultra violet spectral range. Diamond photodetectors of ultra violet radiation have the advantage of their opponents due to their unique properties, such as high sensitivity at the range of 190-250 nm and low sensitivity to the solar irradiation. The modification of semiconductive diamond material properties by the doping to get photodetectors with the different width of photosensitivity range is of a great interest. Due to this fact the spectroscopic investigation of artificial diamonds doped with boron took place for the definition of their applicability to produce the wide-spectral photosensitive equipment. The samples of thin diamond films were cut out in a crystallography plane (001). Sample transmission spectra were measured by vacuum infrared Fourier transform spectrometer at the range of 400-7000 cm-1. As a result it was explored that diamond based detectors doped with boron could be applied for the detection of infrared irradiation at the average infrared spectral range, however it is necessary to optimize the doping level of diamond materials to reach the compromise between the sensitivity and the speed capability of produced diamond photodetectors.