Correction - Synthesis and characterization of boron and nitrogen co-doped diamond crystals under high pressure and high temperature conditions
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2017-01-01 |
| Journal | CrystEngComm |
| Authors | Meihua Hu, Ning Bi, Shangsheng Li, Tai-chao Su, Qiang Hu |
| Institutions | Jiaozuo University, Jilin University |
| Analysis | Full AI Review Included |
6CCVD Technical Analysis & Material Solutions Brief
Section titled “6CCVD Technical Analysis & Material Solutions Brief”Research Focus: Correction on the scale of Boron and Nitrogen co-doped diamond crystals synthesized under High Pressure High Temperature (HPHT) conditions.
Executive Summary
Section titled “Executive Summary”This analysis targets the synthesis and characterization of B-N co-doped diamond crystals, highlighting their morphology and the critical importance of accurate dimensional scaling in superhard material research.
- Material Focus: Synthesis of Boron and Nitrogen (B-N) co-doped Single Crystal Diamond (SCD) via High Pressure High Temperature (HPHT) methods.
- Dimensional Clarity: Corrected scale bar confirms the crystal samples are synthesized on the millimeter (1.0 mm) scale, critical for evaluating growth yield and electronic device potential.
- Morphology: Crystals exhibit distinct growth habits, specifically the square (100) face and the hexagonal/octagonal (111) face, common in HPHT synthesis.
- Doping Relevance: Co-doping with B and N is fundamental for tuning diamond properties, specifically targeting conductive materials (Boron doping/BDD) or creating precursors for quantum defects (Nitrogen/NV centers).
- 6CCVD Advantage: While this paper utilizes HPHT, 6CCVD specializes in MPCVD, offering superior control over B-doping density (Boron Doped Diamond, BDD) and large-area scalability far beyond the documented 1.0 mm dimensions.
Technical Specifications
Section titled “Technical Specifications”The following specifications are extracted directly from the corrected figure and context of the research paper (CrystEngComm, 2017, 19, 5146).
| Parameter | Value | Unit | Context |
|---|---|---|---|
| Crystal Material | Boron and Nitrogen Co-doped Diamond | N/A | Semiconductor Grade Doping |
| Synthesis Method | High Pressure High Temperature | N/A | Context of Original Study (HPHT) |
| Maximum Size (Confirmed) | Approximately 1.0 | mm | Scale bar correction (Fig. 2) |
| Primary Growth Orientation (a) | (100) Crystal Face | N/A | Predominant face for electronic applications |
| Secondary Growth Orientation (b) | (111) Crystal Face | N/A | Observed faceted growth habit |
| Visual Appearance | Yellowish to Dark Blue | N/A | Coloration indicative of mixed B and N incorporation |
| Original Unit Error | 1 | cm | Incorrect scale reported in published figure |
| Corrected Unit Scale | 1.0 | mm | Critical correction for dimensional accuracy |
Key Methodologies
Section titled “Key Methodologies”The research focuses on the crystalline results of a co-doped synthesis process. Though specific recipe parameters are absent in this correction notice, the underlying methodology is clearly defined by the title and resulting crystal morphology.
- High Pressure High Temperature (HPHT) Growth: Synthesis performed under extreme thermodynamic conditions necessary for HPHT diamond formation.
- Co-doping Strategy: Intentional introduction of both Boron (B, p-type dopant) and Nitrogen (N, deep donor/NV precursor) into the carbon lattice during growth.
- Morphological Analysis: Characterization relying on optical imaging to differentiate between synthesized crystals exhibiting dominant (100) faces (typical square growth) and those exhibiting highly faceted (111) faces (octagonal/hexagonal structure).
- Dimensional Verification: Confirmation that the resulting co-doped single crystals are grown to millimeter scale (1.0 mm), providing a benchmark for growth yield and potential use as electrical or optical components.
6CCVD Solutions & Capabilities
Section titled “6CCVD Solutions & Capabilities”6CCVD provides MPCVD (Microwave Plasma Chemical Vapor Deposition) diamond solutions that directly address the material needs demonstrated in this HPHT research, offering superior scalability, purity, and crystal control for advanced applications.
Applicable Materials for Replication and Scaling
Section titled “Applicable Materials for Replication and Scaling”The requirement for electrically active, doped diamond (B-N co-doped) is optimally met by 6CCVD’s MPCVD-grown materials, which allow precise control over dopant concentration, crystallinity, and size.
| Material | Description | Advantages over HPHT Synthesis |
|---|---|---|
| Boron-Doped Single Crystal Diamond (SCD-BDD) | High-purity, conductive diamond layers with adjustable boron concentrations. Ideal for sensors and high-frequency electronics. | Superior purity; high crystallinity; controlled thickness (0.1µm - 500µm); low strain. |
| Nitrogen-Doped Single Crystal Diamond (SCD) | Used for creating highly controlled Nitrogen Vacancy (NV) centers, critical for quantum computing and sensing applications. | Precise doping control in the gas phase (CH4, H2, N2); reproducible defect engineering. |
| Polycrystalline Diamond (PCD-BDD) | Large-area conductive diamond films up to 125mm. Perfect for electrochemical applications (e.g., water treatment). | Unmatched large-area capability (up to 125mm wafers); lower cost for conductive coatings. |
Customization Potential for Scientific Advancement
Section titled “Customization Potential for Scientific Advancement”The HPHT study produced crystals up to 1.0 mm in size. 6CCVD’s MPCVD expertise enables material scaling and customization far exceeding these dimensions.
- Large-Area Growth: We offer PCD plates/wafers up to 125mm diameter, ideal for scaling up conductive BDD applications.
- Custom Dimensions and Geometries: Unlike traditional HPHT processes, 6CCVD provides custom laser cutting and shaping services to produce specific geometries based on the desired growth face ((100) or (111)) or electrode design.
- Surface Preparation: Achieving optimal performance requires ultra-smooth surfaces. 6CCVD guarantees Ra < 1nm for SCD substrates and Ra < 5nm for inch-size PCD, ensuring high-quality interfaces for metalization.
- Integrated Metalization Services: For device fabrication utilizing these B-N doped crystals, 6CCVD provides in-house deposition services for standard contacts, including Au, Pt, Pd, Ti, W, and Cu.
Engineering Support
Section titled “Engineering Support”Achieving specific co-doped properties, such as precise resistivity required for a BDD electrode or controlled N concentration for NV center creation, requires deep expertise in MPCVD growth recipes.
6CCVD’s in-house PhD team provides specialized engineering consultation to assist researchers and engineers with:
- Material selection for similar boron or nitrogen co-doped electronic projects.
- Optimization of growth parameters to achieve targeted conductivity or optical transparency.
- Guidance on substrate selection (SCD, PCD, specific orientation) based on application requirements (e.g., thermal management, electronic mobility, or quantum coherence).
- Global DDP shipping coordination to ensure rapid, hassle-free delivery of precision diamond materials worldwide.
For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.
View Original Abstract
Correction for ‘Synthesis and characterization of boron and nitrogen co-doped diamond crystals under high pressure and high temperature conditions’ by Meihua Hu <italic>et al.</italic>, <italic>CrystEngComm</italic>, 2017, <bold>19</bold>, 4571-4575.