High-power heterogeneously integrated waveguide-coupled photodiodes on silicon-on-diamond
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2016-10-01 |
| Authors | Xiaojun Xie, Naiming Liu, Zhanyu Yang, Anand Ramaswamy, Yang Shen |
| Institutions | Aurrion (United States), University of Virginia |
| Citations | 1 |
Abstract
Section titled “Abstract”We demonstrate InP-based high power modified uni-traveling carrier photodiodes heterogeneously integrated on silicon on diamond (SOD) waveguides. These photodiodes reach 20 nA dark current at -5 V bias voltage. A 50 μm long device exhibits an internal responsivity of 1.07 A/W. The bandwidths of the devices with 14×25 μm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sup> , 14×50 μm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sup> , 14×100 μm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sup> and 14×150 μm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sup> area are 22 GHz, 16 GHz, 10 GHz and 7 GHz, respectively. The maximum output RF powers of the 14×100 μm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sup> photodiode are 15.3 dBm at 10 GHz and 19.8 dBm at 1 GHz. The maximum DC dissipated power at 1 GHz is 0.8 W. To our knowledge, this is the first demonstration of III-V photodiodes integrated into a SOD architecture.