pss– taking legacy to the future

At a Glance

Metadata	Details
Publication Date	2016-01-01
Journal	Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
Authors	Sabine Bahrs, Nadezda Panarina, Stefan Hildebrandt
Analysis	Full AI Review Included

Technical Documentation & Analysis: Advanced Materials for Solid State Physics

This documentation analyzes the research landscape presented in the Physica Status Solidi C Editorial (2016) and positions 6CCVD’s Microwave Plasma Chemical Vapor Deposition (MPCVD) diamond materials as the critical enabling technology for replicating and advancing the highlighted research areas, including Diamond Science, Photovoltaics, and Functional Interfaces.

Executive Summary

The solid-state physics community, as evidenced by the topical issues published in pss, demonstrates a sustained and accelerating interest in advanced materials, positioning MPCVD diamond as a core research component.

Sustained Diamond Focus: The journal’s dedicated “20 Years of Science for Diamond” issue (Ref [5]) confirms diamond’s critical role in long-lasting solid-state physics research.
Key Applications: Research focuses heavily on device physics, functional interfaces, photovoltaics, and advanced carbon-based structures (“Carbononics”).
Material Requirement: These applications necessitate high-purity, precisely engineered diamond materials, including Single Crystal Diamond (SCD) and Boron-Doped Diamond (BDD).
6CCVD Core Value: 6CCVD specializes in providing custom SCD and PCD wafers, offering unparalleled control over thickness (0.1 µm to 500 µm) and large-area dimensions (up to 125 mm PCD).
Device Integration: We offer essential post-processing capabilities, including ultra-low roughness polishing (Ra < 1 nm for SCD) and custom metalization (Au, Pt, Ti, W) required for functional device integration.
Global Supply Chain: 6CCVD ensures reliable, global delivery (DDU/DDP) of highly specialized diamond components to research facilities worldwide.

Technical Specifications

The following table outlines 6CCVD’s material specifications required to meet the demanding requirements of advanced solid-state physics research, particularly in high-performance device fabrication and functional interface engineering.

Parameter	Value	Unit	Context
Maximum PCD Diameter	125	mm	Required for scaling up Photovoltaic (Ref [7]) and large-area electrode research
SCD Thickness Range	0.1 - 500	µm	Precision control for quantum emitters, thin-film sensors, and high-power devices
PCD Thickness Range	0.1 - 500	µm	Versatile thickness for thermal management and electrochemical applications
SCD Surface Roughness (Ra)	< 1	nm	Essential for high-quality epitaxial growth and “Engineering of Functional Interfaces” (Ref [10])
PCD Surface Roughness (Ra)	< 5	nm	Available for inch-size wafers, crucial for uniform metalization and bonding
Doping Capability	Boron (BDD)	N/A	Creating p-type semiconductors and highly conductive layers for TCO analogs (Ref [6])
Metalization Options	Au, Pt, Pd, Ti, W, Cu	N/A	Custom ohmic and Schottky contacts for device physics experiments
Substrate Thickness	Up to 10	mm	High-power heat spreaders and structural components

Key Methodologies

The research topics highlighted in pss (Diamond Science, Functional Interfaces, Carbononics) rely on highly controlled synthesis and processing techniques. 6CCVD’s internal capabilities directly support the following methodologies:

High-Purity MPCVD Synthesis: Utilizing Microwave Plasma Chemical Vapor Deposition to grow Electronic Grade and Optical Grade SCD and PCD with precise control over nitrogen and defect concentrations, critical for quantum and high-power applications.
Controlled Doping for Conductivity: Implementing in situ Boron doping during MPCVD growth to produce highly conductive Boron-Doped Diamond (BDD) films, necessary for mimicking “Transparent Conductive Oxides” (Ref [6]) and creating advanced electrodes.
Precision Thin Film Processing: Achieving sub-micron thickness control (down to 0.1 µm) for ultra-thin SCD layers, enabling fundamental studies on “low-dimensional structures” and functional interfaces.
Advanced Surface Preparation: Employing chemo-mechanical polishing (CMP) to achieve atomic-scale smoothness (Ra < 1 nm), which is mandatory for subsequent heteroepitaxy or the creation of stable, low-resistance functional interfaces (Ref [10]).
Custom Device Metalization: Applying multi-layer metal stacks (e.g., Ti/Pt/Au) using internal PVD capabilities to ensure robust, low-resistance electrical contacts, facilitating the development of contemporary device physics structures.

6CCVD Solutions & Capabilities

6CCVD is uniquely positioned to supply the foundational diamond materials required to advance the research themes prioritized by the pss community.

Applicable Materials

To replicate and extend the research discussed in the Editorial, 6CCVD recommends the following specialized materials:

Research Focus (Based on pss Topics)	6CCVD Recommended Material	Rationale
Diamond Science (Ref [5])	Electronic Grade SCD (Low N, High Purity)	Ideal for high-power electronics, high-frequency devices, and fundamental semiconductor studies.
Photovoltaics & TCOs (Ref [6], [7])	Heavy Boron-Doped PCD (BDD)	Provides high conductivity and chemical stability, serving as a robust, transparent conductive electrode material.
Functional Interfaces (Ref [10])	Optical Grade SCD (Ra < 1 nm Polished)	Ultra-smooth surface is essential for minimizing scattering losses and ensuring high-quality heteroepitaxial growth.
Carbononics (Ref [11])	Ultra-Thin SCD Films (0.1 µm - 10 µm)	Required for integrating diamond into complex, low-dimensional structures alongside graphene and quantum dots.

Customization Potential

The complexity of modern solid-state physics research demands materials tailored to specific experimental setups. 6CCVD offers comprehensive customization services:

Custom Dimensions: While the Editorial mentions research on low-dimensional structures, scaling up requires larger wafers. 6CCVD provides PCD wafers up to 125 mm in diameter, enabling the transition from lab-scale proof-of-concept to industrial-scale device fabrication (e.g., for Photovoltaics).
Precision Thickness Control: We offer precise control over SCD and PCD thickness from 0.1 µm to 500 µm, allowing researchers to optimize material properties for specific thermal, electronic, or optical requirements.
Advanced Metalization: For device integration (as required by contemporary device physics), 6CCVD provides in-house deposition of custom metal stacks (e.g., Ti/Pt/Au, W/Cu) for creating reliable ohmic or Schottky contacts on both SCD and PCD surfaces.
Laser Cutting and Shaping: Custom geometries, including complex shapes or small dies required for high-frequency testing or integration into micro-electromechanical systems (MEMS), can be achieved via our precision laser cutting services.

Engineering Support

6CCVD’s in-house team of PhD material scientists and engineers provides expert consultation to ensure optimal material selection and integration for complex projects. We can assist researchers working on:

Material Selection: Guiding the choice between SCD, PCD, or BDD based on target electrical conductivity, thermal performance, and optical transparency.
Surface Optimization: Consulting on the required polishing grade (Ra < 1 nm) necessary for successful “Engineering of Functional Interfaces” and subsequent thin-film deposition.
Device Design: Providing technical specifications for metalization schemes to achieve stable, low-resistance contacts for high-performance electronic devices.

For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.

View Original Abstract

Abstract Dear readers, 2016 has a special anniversary coming up for physica status solidi ( pss ): Its most‐ever‐cited article “Optical Properties and Electronic Structure of Amorphous Germanium” by J. Tauc, R. Grigorovici, and A. Vancu (then Prague and Bucharest) was published half a century ago [1]. Printed about two months after receipt of the manuscript on June 1st 1966, it is a witness of the impressively fast publication times of pss back then. The article went online 40 years later in 2006, when Wiley had the pre‐internet‐era content scanned. Citations (right axis) and cumulative citations (left axis) to “Optical Properties and Electronic Structure of Amorphous Germanium” by J. Tauc et al., pss (1966) [1] versus year (Data from Web of Sci‐ence SCI, Dec 2015). magnified image Citations (right axis) and cumulative citations (left axis) to “Optical Properties and Electronic Structure of Amorphous Germanium” by J. Tauc et al., pss (1966) [1] versus year (Data from Web of Sci‐ence SCI, Dec 2015). Beyond the reach of contemporary journal‐usage metrics, it has been collecting citations throughout 50 years, and recently we even saw a pronounced acceleration due to renewed interest in amorphous materials, with groups analyzing and developing the method proposed by Tauc et al. further [2]. pss proudly continues to provide, promote, and safeguard this valuable piece of information, and to accompany it through the changing times of its lasting legacy for the solid state physics research community. All the while, we are working with our authors, reviewers, board members, and guest editors to add content to the journal that has the potential for a similarly impressive career in scientific literature. Much of pss ’ most interesting content is attracted by specially compiled, topical publications in collaboration with guest editors these days, and we can mention only a few of them here. Prominently in 2015, pss leaned in on the recent physics Nobel Prize topic again with a double issue on Nitride Semiconductors [3], and also the January issue of pss ( b ) in 2016 is dedicated to the specific challenges of Polarization‐Field Control in Nitride Light Emit‐ters [4]. Regarding long‐lasting topics we should mention the “20 Years of Science for Diamond” issue in pss ( a ) [5], and on the contemporary device physics line both “Transparent Conductive Oxides - Fundamentals and Applications” [6] and the issue dedicated to “Advanced Materials and Nano‐ technology for Photovoltaics” [7]. Reflecting the intense activity in the field and its impact on the world energy economy, photovoltaics based on inorganic as well as organic electronics have been increasingly prominent throughout the pss journal family, also resulting in the pss ( RRL ) standing topical section “RRL solar”. pss ( b ) has a very interesting collection on the physics of low‐dimensional structures, including graphene, nanotubes, and transition‐metal dichalcogenides, in “Electronic Properties of Novel Materials: Molecular Nanostructures” [8]. Venturing into more inter‐ disciplinary areas, pss ( b ) also published “Auxetics and Other Systems of ‘Negative’ Characteristics” with 32 contributions from physics, mathematics, and engineering perspectives [9] and pss ( a ) had “Engineering of Functional Interfaces” [10]. This year we are looking forward to “Carbononics - Integrating Electronics, Photonics and Spintronics with Graphene Quantum Dots” [11], a Focus Issue in pss ( RRL ), and many other interesting projects. In 2015, physica status solidi (c) - current topics in solid state physics joined the other pss family journals on the editorial platform Editorial Manager. With system data on a new level of transparency, we may report for the year that pss published 1172 articles, worked with 71 guest editors and received approximately 4400 reviewer reports (including re‐reviews). As is obvious from these numbers, the journal family flourishes due to its lively interaction and the lasting strong support from the solid state researcher community. We would like to convey our sincere gratitude to all board members, guest editors, reviewers, and authors for the time and work they invest. And of course, we remain open for your future suggestions, and we will observe closely which topic may be poised to become the next pss evergreen. With best wishes for a prosperous year 2016, Sabine Bahrs, Nadezda Panarina, and Stefan Hildebrandt Editors physica status solidi

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Original Source

DOI: https://doi.org/10.1002/pssc.201670111