Electrochemical Characteristics of Boron-doped Ultrananocrystalline Diamond Amorphous Carbon Composite Films Fabricated by Coaxial Arc Plasma Deposition
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2016-01-01 |
| Journal | çŁæ„ćżçšć·„ćŠäŒè«æèȘ |
| Authors | æŠćŁ ć, é äč ć€§è„ż, ć€§èŒ è€æŹ, ć ćæŠ |
| Citations | 1 |
| Analysis | Full AI Review Included |
6CCVD Material Analysis: High-Performance Boron-Doped Diamond Electrodes for Environmental Applications
Section titled â6CCVD Material Analysis: High-Performance Boron-Doped Diamond Electrodes for Environmental ApplicationsâAnalysis of: âElectrochemical Characteristics of Boron-doped Ultrananocrystalline Diamond / Amorphous Carbon Composite Films Fabricated by Coaxial Arc Plasma Depositionâ (2016)
Executive Summary
Section titled âExecutive SummaryâThis documentation summarizes the electrochemical performance of B-doped Ultrananocrystalline Diamond (UNCD) / Amorphous Carbon (a-C) composite films and presents 6CCVDâs capabilities to meet and exceed the material requirements for similar applications.
- Core Achievement: Boron-doped diamond (BDD) films fabricated via Coaxial Arc Plasma Deposition (CAPD) successfully demonstrated highly conductive characteristics suitable for advanced electrochemical electrodes.
- Performance Equivalence: The composite BDD film exhibited an exceptionally wide potential window and ultra-low background current, achieving electrochemical characteristics highly similar to commercial conductive Polycrystalline Diamond (PCD) electrodes.
- Wastewater Efficacy: When applied as an anode for wastewater treatment, the B-doped UNCD/a-C film achieved a Total Organic Carbon (TOC) removal rate approximately 2 times greater than a standard Platinum (Pt) electrode after 60 minutes of electrolysis.
- Material Design: The highly efficient performance is attributed to the p-type semiconductor behavior of the composite, which integrates approximately 6 nm UNCD grains within an amorphous carbon matrix.
- Fabrication Method: The material was fabricated rapidly (high deposition rate) under unconventional conditions (Vacuum, Room Temperature), contrasting with traditional high-temperature CVD methods, yet yielding high-performance material.
- 6CCVD Value Proposition: 6CCVD offers high-quality, scalable Boron-Doped Polycrystalline Diamond (BDD PCD) plates via MPCVD, providing superior crystallinity, controllable doping, and large-area capability (up to 125 mm) required for industrial implementation of high-performance BDD electrodes.
Technical Specifications
Section titled âTechnical SpecificationsâThe following table extracts key technical data and performance metrics demonstrated in the study:
| Parameter | Value | Unit | Context / Reference Material |
|---|---|---|---|
| Film Composition | UNCD / a-C Composite | N/A | Boron-doped (5 at% B in Graphite cathode) |
| Film Thickness | 800 | nm | Deposited on p-type Si substrate |
| UNCD Grain Size | ~6 | nm | Confirmed via XRD and Raman Spectroscopy |
| Electrochemical Window | Wide | N/A | Measured via CV; similar to conductive PCD |
| CV Electrolyte | 1.0 mol/L H2SO4 | Solution | Sulfuric acid used for cyclic voltammetry |
| CV Scan Rate | 50 | mV/s | Standard testing condition |
| TOC Treatment Solution | Ethanol Water (100 mg TOC/L) | Solution | Electrolyte: 0.20 mol/L Na2SO4 |
| Anode Electrode Area | 80 | mm2 | Used for TOC removal experiments |
| Applied Current Density | 1.5 | A/dm2 | Constant current applied during electrolysis |
| TOC Removal Performance | 2x higher than Pt | Ratio | Efficiency after 60 minutes electrolysis |
Key Methodologies
Section titled âKey MethodologiesâThe composite B-doped UNCD/a-C films were synthesized using a high-rate deposition technique and characterized for their ability to function as high-performance electrochemical anodes.
- Deposition Method: Coaxial Arc Plasma Deposition (CAPD) was employed, a Physical Vapor Deposition (PVD) technique known for high deposition rates (2 orders of magnitude faster than conventional CVD).
- Substrate & Conditions: The films were deposited onto p-type Silicon (Si) substrates under vacuum conditions at Room Temperature, eliminating the need for typical CVD pre-treatment or high temperatures.
- Source Material: A high-purity Graphite (99.99%) cathode doped with 5 at% Boron (B) served as the source for the B-doped carbon plasma.
- Film Characterization: Powder X-ray Diffraction (XRD) and Raman spectroscopy confirmed the structure as a composite of ultrananocrystalline diamond (grain size approximately 6 nm) mixed with amorphous carbon (a-C), exhibiting p-type semiconductor behavior.
- Electrochemical Testing Setup: Cyclic Voltammetry (CV) was performed using a three-electrode cell configuration (Diamond working electrode, Pt counter electrode, Ag/AgCl reference electrode) in a 1.0 mol/L H2SO4 electrolyte.
- TOC Removal Test: A batch electrolytic setup was utilized for wastewater treatment. The 80 mm2 diamond film anode and a stainless steel cathode were separated by 5.0 mm. Treatment was conducted for 60 minutes at a current density of 1.5 A/dm2 with an upward flow rate of 0.60 L/h.
6CCVD Solutions & Capabilities
Section titled â6CCVD Solutions & CapabilitiesâThis study confirms the extraordinary potential of Boron-Doped Diamond (BDD) materials for high-efficiency wastewater treatment electrodes. While the paper used a UNCD/a-C composite fabricated via CAPD, 6CCVD specializes in high-quality, highly conductive BDD Polycrystalline Diamond (PCD) manufactured via scalable MPCVD, offering superior control and industrial readiness.
Applicable Materials
Section titled âApplicable MaterialsâThe ideal material solution from the 6CCVD catalog for replicating or advancing this research is:
- Heavy Boron-Doped Polycrystalline Diamond (BDD PCD): 6CCVD BDD PCD offers precise control over Boron incorporation during MPCVD growth, yielding high-conductivity films that match or exceed the stability and wide potential window observed in the studyâs UNCD/a-C films. This material is inherently robust, ensuring long operational life in challenging electrochemical environments.
| Requirement & Feature | 6CCVD Advantage | Specification Detail |
|---|---|---|
| Material Quality & Consistency | High-Quality MPCVD Growth | Provides superior crystallinity and uniformity compared to arc plasma deposition methods, ensuring stable electrical performance. |
| Dimensional Scale-Up | Industry-Leading Dimensions | Plates/wafers available up to 125 mm diameter (PCD), enabling seamless scale-up for pilot or industrial wastewater treatment reactors. |
| Thickness Control | Micro to Meso-Scale Precision | SCD and PCD thickness control from 0.1 ”m up to 500 ”m. We can supply thicker films than the 800 nm used in the paper for enhanced robustness and longevity. |
| Surface Finish | High-Performance Polishing | Standard Polycrystalline surfaces polished to Ra < 5 nm (inch-size), optimizing the electrode/electrolyte interface for stable current distribution. |
Customization Potential
Section titled âCustomization Potentialâ6CCVD is uniquely positioned to handle the demanding engineering and integration requirements of BDD electrodes:
- Custom Metalization: The integration of robust electrical contacts is critical for industrial cells. 6CCVD offers in-house custom metalization stacks, including Ti/Pt/Au, W, Cu, or Pd, tailored for specific substrate bonding and long-term chemical resilience.
- Custom Geometry: We offer precise laser cutting and shaping services to produce BDD electrodes in arbitrary geometries (circles, rectangles, complex shapes) exactly matching the specifications of specialized reactor designs.
- Substrates: While the study used p-type Si, 6CCVD can integrate BDD onto various substrates or provide free-standing BDD foils for maximum active area.
Engineering Support
Section titled âEngineering Supportâ6CCVDâs commitment to scientific excellence supports client success:
- PhD Material Consultation: Our in-house PhD team provides expert engineering support for optimizing material selection, Boron doping concentration, surface termination, and integration techniques specifically for advanced electrochemical oxidation processes (AOPs) and industrial wastewater remediation projects.
- Global Logistics: We provide reliable global shipping (DDU default, DDP available) to ensure rapid delivery of mission-critical materials worldwide.
For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.
View Original Abstract
Boron-doped ultrananocrystalline diamond (UNCD) ïŻamorphous carbon (a-C) composite films were fabricated by a coaxial arc plasma deposition (CAPD) method. Cyclic voltammetry measurements of deposited films showed wide electrical potential window and very low background current, which remarkably similar to conductive poly crystalline diamond (PCD) electrodes. In addition, it was confirmed that deposited films have removal effects of total organic carbon (TOC) in an ethanol water solution. Boron-doped UNCD/a-C films have potential for behaving as an electrode with wastewater treatment effects.