Electronic properties of diamond Schottky barrier diodes fabricated on silicon-based heteroepitaxially grown diamond substrates
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-09-16 |
| Journal | Applied Physics Express |
| Authors | Hiroyuki Kawashima, Hitoshi Noguchi, Tsubasa Matsumoto, Hiromitsu Kato, Masahiko Ogura |
| Institutions | University of Tsukuba, National Institute of Advanced Industrial Science and Technology |
| Citations | 38 |
Abstract
Section titled āAbstractāDiamond Schottky barrier diodes (SBDs) were fabricated on silicon-based heteroepitaxially grown diamond substrates. Platinum Schottky metal and boron-doped p-type diamond were used as SBDs. The diodes exhibited good current-voltage (I-V) characteristics. The rectification ratio was over 1012 at Ā±4 V, and the ideality factor was 1.2. The breakdown voltage estimated at the metal/diamond interface was as high as ā¼1 MV/cm, which is greater than the material limit of silicon (ā¼0.3 MV/cm). This achievement, which does not require the use of single-crystalline diamond substrates, will accelerate the development of the diamond electronic industry.