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Phonon-Induced Population Dynamics and Intersystem Crossing in Nitrogen-Vacancy Centers

MetadataDetails
Publication Date2015-04-08
JournalPhysical Review Letters
AuthorsMichael Goldman, Alp Sipahigil, Marcus W. Doherty, Norman Y. Yao, Steven Bennett
InstitutionsHarvard University, Element Six (United Kingdom)
Citations175
AnalysisFull AI Review Included

Technical Documentation & Analysis: Phonon-Induced Dynamics in NV Centers

Section titled “Technical Documentation & Analysis: Phonon-Induced Dynamics in NV Centers”

This document analyzes the research paper “Phonon-Induced Population Dynamics and Intersystem Crossing in Nitrogen-Vacancy Centers” to provide technical specifications and align the material requirements with 6CCVD’s advanced CVD diamond capabilities.


This research provides critical insights into the fundamental physics governing the Nitrogen-Vacancy (NV) center in diamond, specifically focusing on the mechanisms that limit its performance as a quantum sensor and register.

  • Core Achievement: Direct measurement and quantification of phonon-induced mixing rates ($\Gamma_{\text{Mix}}$) and Intersystem Crossing (ISC) rates within the NV center’s excited state ($^3$E) manifold.
  • Phonon Dynamics: Demonstrated that phonon-induced orbital mixing can be completely suppressed at cryogenic temperatures (T $\approx$ 5.8 K), validating the potential for high-fidelity quantum operations at low temperatures.
  • Material Requirement: The experiment relied on a Solid-Immersion Lens (SIL) fabricated from bulk electronic grade CVD diamond, highlighting the necessity of ultra-high purity, low-strain Single Crystal Diamond (SCD) for resolving subtle quantum dynamics.
  • ISC Mechanism Model: Developed a comprehensive theoretical model unifying spin-orbit coupling, phonon-induced transitions, and lattice relaxation, showing excellent quantitative agreement with measured ISC rates.
  • Electronic Structure Confinement: The analysis successfully confined the unknown energy spacing ($\Delta$) between the $^3$E and $^1$A$_1$ states to a narrow, physically relevant range (344 to 430 meV), guiding future optical spectroscopy efforts.
  • Application Impact: The findings are crucial for engineering enhanced spin initialization and readout fidelities, directly impacting the performance of NV centers in room-temperature sensing and quantum computing applications.

The following table extracts key quantitative data points and material parameters used or derived in the research.

ParameterValueUnitContext
Diamond Material GradeElectronic Grade CVDN/AUsed for Solid-Immersion Lens (SIL) fabrication.
SIL Diameter1.0mmCustom dimension of the optical component.
Crystal Orientation(100)N/ACrystal plane used for SIL fabrication.
Experimental Temperature Range4.8 to 700KRange tested, covering cryogenic to high temperatures.
Phonon Mixing Suppression Temp5.8KTemperature where $\Gamma_{\text{Add}}$ is frozen out.
Radiative Lifetime ($\tau_{\text{Rad}}$)13.2 ± 0.5nsAverage lifetime of the $
ISC Rate ($\Gamma_{A1}/2\pi$)16.0 ± 0.6MHzMeasured ISC rate from the $
ISC Rate ($\Gamma_{\text{ISC}, E_{x}}/2\pi$) Upper Bound0.62 ± 0.21MHzUpper limit for ISC rate from $
Orbital Splitting ($\Delta_{xy}$)3.9GHzEnergy splitting between $
$^3$E - $^1$A$_1$ Energy Spacing ($\Delta$)344 to 430meVConfined range for the critical energy gap.
Electron-Phonon Coupling ($\eta$)2$\pi$ $\times$ (44.0 ± 2.4)MHz meV-3Parameter used to model coupling strength.
Polarization Selectivity (1 - $\epsilon$)90%Achieved selectivity in ZPL fluorescence measurement.

The experiment utilized advanced resonant optical techniques on high-purity diamond to isolate and measure the subtle dynamics of the NV center.

  1. Material Preparation: A 1.0 mm diameter Solid-Immersion Lens (SIL) was fabricated from bulk electronic grade CVD diamond, cut along the (100) crystal plane, to enhance photon collection efficiency.
  2. Cryogenic Control: The SIL was mounted in a continuous flow helium cryostat, allowing precise temperature variation from 4.8 K to room temperature.
  3. Spin Initialization: Nonresonant excitation using a 532 nm laser was used for initial preparation of the NV center’s charge and spin states.
  4. Resonant Manipulation: Two tuneable external-cavity diode lasers (637 nm) were gated by electro-optical modulators to apply independent, highly coherent resonant pulses.
  5. Rabi Decoherence Measurement: Optical Rabi oscillations between $|0\rangle$ and $|E_x\rangle$ were measured by recording the arrival times of Phonon Sideband (PSB) photons, allowing extraction of the additional decoherence rate ($\Gamma_{\text{Add}}$).
  6. Population Transfer Measurement: Phonon-induced population transfer between $|E_x\rangle$ and $|E_y\rangle$ was directly observed by measuring the depolarization of the emitted Zero-Phonon Line (ZPL) fluorescence, utilizing the orthogonal linear polarization of the decay paths.
  7. ISC Rate Extraction: Excited state lifetimes ($\tau_i$) were measured as a function of temperature via PSB fluorescence decay after excitation into specific $^3$E states, enabling the calculation of state-dependent ISC rates ($\Gamma_i$).

This research underscores the critical need for ultra-high-quality, custom-engineered diamond materials. 6CCVD is uniquely positioned to supply the necessary Single Crystal Diamond (SCD) substrates and fabrication services required to replicate, extend, and commercialize this quantum research.

To achieve the low strain and high purity necessary for resolving the narrow optical transitions and subtle phonon dynamics observed in this paper, the following 6CCVD material is required:

  • Optical Grade Single Crystal Diamond (SCD): Our SCD is grown via MPCVD with ultra-low nitrogen content (PPM level), ensuring minimal lattice defects and strain. This is the direct equivalent of the “electronic grade CVD diamond” used in the study, guaranteeing stable NV centers with long coherence times.

The fabrication of the 1.0 mm diameter (100) SIL is a key material engineering step. 6CCVD specializes in providing custom solutions that meet the precise geometric and crystallographic demands of quantum optics.

Research Requirement6CCVD CapabilityTechnical Specification
Custom Optical Components (1.0 mm SIL)Precision Laser Cutting & ShapingCustom dimensions available from 0.1 ”m up to 125 mm (PCD) plates. Ideal for fabricating SILs, prisms, or micro-structures.
Specific Crystal Orientation ((100) plane)Orientation ControlSCD substrates available in standard (100) and (111) orientations, ensuring precise alignment with the NV center axis.
Surface Finish (Required for low-loss optics)Ultra-Low Roughness PolishingSCD polishing capability achieving Ra < 1 nm, minimizing scattering losses for resonant excitation and collection.
Thickness RequirementsVersatile Thickness RangeSCD wafers available from 0.1 ”m up to 500 ”m, and substrates up to 10 mm thick, suitable for bulk optics or thin-film integration.
Future Integration (Micro-wave/RF control)Custom MetalizationInternal capability for depositing Au, Pt, Pd, Ti, W, and Cu contacts, enabling integration of microwave strip lines or electrodes directly onto the diamond surface for spin manipulation.

The successful modeling of the Intersystem Crossing (ISC) mechanism requires deep expertise in solid-state physics and defect engineering. 6CCVD’s in-house PhD team offers authoritative support for projects involving:

  • NV Center Optimization: Assistance with material selection to minimize strain and maximize the coherence time ($T_2$) and spin initialization fidelity required for advanced quantum sensing projects (e.g., nanoscale magnetometry or thermometry).
  • Phonon Engineering: Consultation on how material properties (e.g., isotopic purity, strain management) can be tailored to control electron-phonon coupling, crucial for applications like optical cooling of diamond resonators or generating spin-squeezed states, as discussed in the paper.
  • Custom BDD Applications: For researchers exploring alternative defects or requiring conductive diamond, 6CCVD offers Boron-Doped Diamond (BDD) materials with controlled doping levels.

For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly. We ship globally (DDU default, DDP available).

View Original Abstract

We report direct measurement of population dynamics in the excited state manifold of a nitrogen-vacancy (NV) center in diamond. We quantify the phonon-induced mixing rate and demonstrate that it can be completely suppressed at low temperatures. Further, we measure the intersystem crossing (ISC) rate for different excited states and develop a theoretical model that unifies the phonon-induced mixing and ISC mechanisms. We find that our model is in excellent agreement with experiment and that it can be used to predict unknown elements of the NV center’s electronic structure. We discuss the model’s implications for enhancing the NV center’s performance as a room-temperature sensor.