High Pressure Semiconductor Physics
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2015-04-01 |
| Journal | physica status solidi (b) |
| Authors | T. Suski, William Paul |
| Citations | 87 |
| Analysis | Full AI Review Included |
Technical Documentation & Analysis: High Pressure Semiconductor Physics
Section titled âTechnical Documentation & Analysis: High Pressure Semiconductor PhysicsâExecutive Summary
Section titled âExecutive SummaryâThis documentation analyzes the material requirements implied by the research presented at the International Conference on High Pressure in Semiconductor Physics (HPSP-16). The focus on materials, heterostructures, and nanostructures under high stress necessitates the use of high-performance diamond materials, a core specialty of 6CCVD.
- Core Application Focus: Research into new semiconductor materials and devices operating under extreme mechanical stress and high pressure (e.g., Diamond Anvil Cells, high-power electronics).
- Material Requirement: Ultra-high purity, mechanically robust, and thermally conductive diamond is essential for both experimental apparatus (anvils, windows) and advanced device substrates.
- 6CCVD SCD Advantage: We provide Single Crystal Diamond (SCD) with ultra-low surface roughness (Ra < 1nm) and low birefringence, critical for optical access in high-pressure cells.
- 6CCVD PCD Advantage: We offer Polycrystalline Diamond (PCD) wafers up to 125mm for large-area, high-thermal-load substrates, ideal for scaling up high-stress device prototypes.
- Electrochemical/Sensor Needs: Boron-Doped Diamond (BDD) is available for researchers requiring stable, conductive electrodes or studying diamondâs intrinsic superconductivity under pressure.
- Customization: Full in-house capability for custom thickness (0.1”m to 500”m) and multi-layer metalization (Au, Pt, Ti, W) tailored for specific high-pressure cell geometries.
Technical Specifications
Section titled âTechnical SpecificationsâThe research area of High Pressure Semiconductor Physics demands materials capable of operating under extreme conditions. The table below outlines the critical material specifications 6CCVD provides to meet these demands, based on the implied needs of the HPSP-16 conference topics.
| Parameter | Value | Unit | Context |
|---|---|---|---|
| Maximum Pressure Capability (SCD) | Up to 500 | GPa | Required for fundamental physics studies using Diamond Anvil Cells (DACs). |
| SCD Surface Roughness (Polished) | Ra < 1 | nm | Essential for high-quality optical windows and low-loss interfaces. |
| Maximum PCD Wafer Diameter | 125 | mm | 6CCVD capability for large-area, high-power electronic substrates. |
| SCD Thickness Range | 0.1”m to 500 | ”m | Flexibility for thin-film studies or robust anvil construction. |
| BDD Doping Concentration | 1019 to 1021 | atoms/cm3 | Required for conductive electrodes and superconductivity research. |
| Thermal Conductivity (SCD) | > 2000 | W/mK | Critical for heat dissipation in high-stress, high-power devices. |
| Metalization Layers Offered | Au, Pt, Ti, W, Cu | N/A | Custom contacts for electrical transport measurements under pressure. |
Key Methodologies
Section titled âKey MethodologiesâThe research presented at HPSP-16 relies on advanced methodologies that require specialized diamond materials for successful execution. 6CCVD supports these methods by providing tailored MPCVD diamond components.
- Diamond Anvil Cell (DAC) Operation: Requires high-purity, low-birefringence Single Crystal Diamond (SCD) for the anvils and optical windows to allow spectroscopic analysis (e.g., Raman, IR) of samples under extreme hydrostatic pressure.
- Nanostructure and Heterostructure Synthesis: Involves growing or characterizing novel semiconductor layers (e.g., GaN, SiC) on diamond substrates, leveraging diamondâs superior thermal management properties to mitigate thermal stress during operation.
- Electrical Transport Measurements under Stress: Utilizes Boron-Doped Diamond (BDD) as a stable, chemically inert electrode material, often requiring custom metalization (e.g., Ti/Pt/Au stacks) applied directly to the BDD surface for reliable high-pressure electrical contacts.
- High-Stress Substrate Engineering: Employing large-area Polycrystalline Diamond (PCD) plates (up to 125mm) as robust, high-thermal-conductivity carriers for devices designed to operate under significant mechanical and thermal load.
6CCVD Solutions & Capabilities
Section titled â6CCVD Solutions & Capabilitiesâ6CCVD is uniquely positioned to supply the advanced MPCVD diamond materials necessary to replicate and extend the high-pressure semiconductor physics research discussed at HPSP-16.
Applicable Materials
Section titled âApplicable Materialsâ| Research Requirement | Recommended 6CCVD Material | Key Benefit |
|---|---|---|
| Optical Windows/Anvils | Optical Grade SCD (Low Birefringence) | Highest mechanical strength and transparency for spectroscopic access up to 500 GPa. |
| High-Power Substrates | High Thermal Conductivity PCD | Wafers up to 125mm with superior heat spreading for devices under high thermal stress. |
| Conductive Electrodes/Sensors | Heavy Boron-Doped Diamond (BDD) | Stable electrochemical properties and metallic/superconducting behavior under pressure. |
| Thin-Film Studies | SCD or PCD (0.1”m thickness) | Ultra-thin films for reduced material volume and specialized interface studies. |
Customization Potential
Section titled âCustomization Potentialâ6CCVDâs in-house manufacturing and processing capabilities directly address the specialized needs of high-pressure research:
- Custom Dimensions: We provide plates and wafers in non-standard sizes, including PCD up to 125mm diameter, and SCD substrates up to 10mm thick, suitable for robust anvil construction.
- Precision Thickness Control: We offer precise control over SCD and PCD thickness, ranging from ultra-thin films (0.1”m) for interface studies to thick substrates (up to 10mm) for high-load applications.
- Ultra-Low Roughness Polishing: Our advanced polishing achieves Ra < 1nm on SCD and Ra < 5nm on inch-size PCD, ensuring optimal optical transmission and high-quality epitaxial interfaces.
- Custom Metalization Services: We offer internal deposition of critical contact layers (Au, Pt, Pd, Ti, W, Cu). This is essential for creating reliable electrical contacts on BDD electrodes or for bonding diamond components within high-pressure apparatus.
- Laser Cutting and Shaping: Custom geometries, including precise facets and specific shapes required for DAC anvils or complex sensor designs, can be achieved through our advanced laser processing capabilities.
Engineering Support
Section titled âEngineering SupportâThe challenges inherent in high-pressure semiconductor physicsâsuch as managing thermal gradients, ensuring mechanical stability, and achieving reliable electrical contactsârequire expert material selection.
6CCVD maintains an in-house team of PhD-level material scientists dedicated to supporting complex engineering projects. We assist researchers in selecting the optimal diamond grade (SCD vs. PCD), doping level (for BDD), and surface preparation (polishing, metalization) required for successful High Pressure Semiconductor Physics experiments.
For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.
View Original Abstract
D.K. Maude and J.C. Portal, Parallel Transport in Low Dimensional Semiconductor Structures. P.C. Klipstein, Tunneling Under Pressure. E. Anastassakis and M. Cardona, Phonones, Strains, and Pressure in Semiconductors. F.H. Pollak, Effects of External Uniaxial Stress on the Optical Properties of Semiconductors and Semiconductor Microstructures. A.R. Adams, M. Silver, and J. Allam, Semiconductor Optoelectronic Devices. S. Porowski and I. Grzegory, The Application of High N2 Pressure in Physics and Technology of III-N Compounds. M. Yousuf, Diamond Anvils in High Pressure Studies of Semiconductors. Chapter References. Subject Index.