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Pick-up and drop transfer of diamond nanosheets

MetadataDetails
Publication Date2015-03-05
JournalNanotechnology
AuthorsV. Seshan, J O Island, R. van Leeuwen, W J Venstra, B. H. Schneider
Citations9
AnalysisFull AI Review Included

Technical Documentation & Analysis: Ultra-Thin MPCVD Diamond Nanosheets for Advanced Device Integration

Section titled “Technical Documentation & Analysis: Ultra-Thin MPCVD Diamond Nanosheets for Advanced Device Integration”

Reference Paper: V Seshan et al., “Pick-up and drop transfer of diamond nanosheets.” Nanotechnology 26(12) 125706 (2015).


This research validates a critical, all-dry transfer technique for integrating ultra-thin Nanocrystalline Diamond (NCD) and Boron-Doped NCD (B-NCD) films into complex micro- and nano-devices, directly addressing major fabrication challenges in NEMS and advanced electronics.

  • Material Achievement: Successful MPCVD growth and subsequent thinning of NCD nanosheets down to 55 nm thickness.
  • Process Innovation: Demonstrated an all-dry, visco-elastic stamp “pick-up and drop” transfer method, eliminating the need for harsh lithography or wet chemical etching for final device integration.
  • Electronic Performance: Transferred B-NCD films exhibited a room-temperature resistivity of 6.0 Ω-cm, suitable for electronic circuits and potential superconducting applications (Tc = 2.1 K reported for highly doped films).
  • Mechanical Performance: Fabricated freely suspended NCD drumhead resonators exhibiting high resonance frequencies (5 to 20 MHz) and Quality Factors (40-155), confirming plate-like mechanical behavior (Young’s Modulus E ≈ 300 GPa).
  • Versatile Integration: Demonstrated transfer onto diverse substrates, including pre-patterned metal electrodes, optical fibers (for optical components), and 2D materials (MoS2) for complex heterostructure fabrication.
  • 6CCVD Value Proposition: 6CCVD specializes in providing the high-quality, large-area, and custom-doped PCD/BDD source material required to scale this transfer technique for commercial and high-volume research applications.

The following hard data points were extracted from the experimental results and material characterization:

ParameterValueUnitContext
NCD Film Thickness (Initial)~180nmGrown via MPCVD on Quartz
NCD Film Thickness (Thinned)~55nmAchieved via O2 RIE
Young’s Modulus (ENCD)300 ± 100GPaPolycrystalline Diamond (Calculated)
Mass Density (ρ)3500kg m-3Polycrystalline Diamond (Typical)
B/C Concentration Ratio (Doping)~3000ppmTrimethylboron gas used for B-NCD
B-NCD Resistivity6.0Ω-cmTwo-terminal measurement (Room Temp)
Resonator Frequency Range (fo)5 to 20MHzDependent on thickness (t) and diameter (d)
Resonator Quality Factor (Q)40 to 155-Measured in vacuum (~10-5 mbar)
Optical Transmittance~60%At 750 nm (for ~185 nm film)
RIE Etch Rate (O2)~15nm/minUsed to thin NCD nanosheets
Electrode Metalization Stack5 nm Ti / 50 nm Au-Pre-patterned on Si/SiO2 substrate

The NCD nanosheets were fabricated using a multi-step process combining MPCVD growth, stress-induced delamination, and dry etching.

  1. Substrate Preparation: Quartz substrates were seeded with diamond nanoparticles prior to growth.
  2. MPCVD Growth Parameters: NCD films were deposited using a conventional Microwave Plasma-Enhanced Chemical Vapour Deposition (MPCVD) process:
    • Plasma Gas: H2/CH4 mixture.
    • Methane Concentration: ~4 % (v/v).
    • Microwave Power: 3500 W.
    • Substrate Temperature: 510-560 °C.
    • Process Pressure: 33-40 mbar.
  3. Boron Doping: For B-NCD films, Trimethylboron gas was introduced, achieving a Boron-to-Carbon concentration ratio of ~3000 ppm.
  4. Stress-Induced Delamination: Growth was stopped when the film reached ~180 nm. The thermal expansion mismatch between the NCD film and the quartz substrate created sufficient stress to crack and delaminate the film, forming weakly adhered nanosheets (typically 50 ”m x 50 ”m).
  5. Nanosheet Thinning: An all-dry Oxygen (O2) Reactive Ion Etching (RIE) process was used to reduce the thickness from ~185 nm to ~55 nm.
    • RIE Parameters: DC bias ~-413 V, O2 gas flow 30 ml/min, Pressure ~20.7 ”bar.
  6. Transfer Technique: An all-dry pick-up and drop method utilizing a transparent visco-elastic stamp (GelFilmÂź) mounted on a 3-axis micromanipulator was used for sub-micron precision placement onto target substrates (e.g., pre-patterned SiO2, optical fibers, MoS2).

The successful fabrication of ultra-thin, high-performance NCD and B-NCD devices relies entirely on the quality and customizability of the source material. 6CCVD is uniquely positioned to supply the necessary MPCVD diamond films to replicate and advance this research.

Research Requirement6CCVD Material SolutionKey Capability Match
Ultra-Thin NCD Films (55 nm - 185 nm)Nanocrystalline PCD6CCVD offers PCD films with thickness control from 0.1 ”m (100 nm) up to 500 ”m, meeting the required thinness range.
Boron Doping (3000 ppm B/C)Heavy Boron-Doped PCD (BDD)Custom doping levels are standard. We can precisely control the B/C ratio to achieve specific resistivity (6.0 Ω-cm) or superconducting properties (Tc).
Large Source MaterialPCD Wafers up to 125 mmWhile the paper used small flakes, 6CCVD provides large-area PCD plates (up to 125 mm diameter) for scalable, high-throughput transfer processes.
High-Quality Mechanical FilmsPolished PCDOur polishing capability (Ra < 5 nm for inch-size PCD) ensures minimal surface roughness, critical for maximizing Q-factors in NEMS resonators.

The pick-up and drop technique is ideal for integrating diamond into complex, pre-fabricated circuits. 6CCVD supports the necessary material preparation steps:

  • Custom Dimensions: We provide diamond plates and wafers up to 125 mm in diameter. We offer in-house laser cutting and dicing services to produce custom-sized source substrates optimized for specific transfer processes.
  • Advanced Metalization: The paper utilized Ti/Au electrodes. 6CCVD offers internal metalization services, allowing researchers to specify complex electrode stacks (Au, Pt, Pd, Ti, W, Cu) directly deposited onto the diamond film or the source substrate, facilitating subsequent lift-off or transfer steps.
  • Substrate Flexibility: We can grow NCD/PCD films on various non-diamond substrates (e.g., silicon, quartz, sapphire) to optimize the stress-induced delamination process demonstrated in this research.

The successful integration of diamond nanosheets into applications like high-frequency NEMS resonators (5-20 MHz) and electronic heterostructures requires precise control over material properties (Young’s Modulus, doping concentration, thickness uniformity).

6CCVD’s in-house PhD team specializes in tailoring MPCVD growth recipes (including H2/CH4 ratios, power, and temperature) to meet the exact mechanical and electrical specifications required for similar Nanomechanical Resonator and 2D Heterostructure projects. We offer consultation on optimizing doping profiles to achieve specific resistivity targets or enhance superconducting performance.

Call to Action: For custom specifications, material consultation, or to order large-area PCD source wafers for scalable transfer techniques, visit 6ccvd.com or contact our engineering team directly.

View Original Abstract

Nanocrystalline diamond (NCD) is a promising material for electronic and mechanical micro- and nanodevices. Here we introduce a versatile pick-up and drop technique that makes it possible to investigate the electrical, optical and mechanical properties of as-grown NCD films. Using this technique, NCD nanosheets, as thin as 55 nm, can be picked-up from a growth substrate and positioned on another substrate. As a proof of concept, electronic devices and mechanical resonators are fabricated and their properties are characterized. In addition, the versatility of the method is further explored by transferring NCD nanosheets onto an optical fiber, which allows measuring its optical absorption. Finally, we show that NCD nanosheets can also be transferred onto two-dimensional crystals, such as MoS2, to fabricate heterostructures. Pick-up and drop transfer enables the fabrication of a variety of NCD-based devices without requiring lithography or wet processing.