Dynamics of excitons bound to nitrogen isoelectronic centers in GaAs
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2015-03-09 |
| Journal | Physical Review B |
| Authors | Philippe St-Jean, G. Ćthier-Majcher, S. Francoeur |
| Institutions | Polytechnique MontrƩal |
| Citations | 9 |
Abstract
Section titled āAbstractāThe first comprehensive study is made of the exciton dynamics and spin-relaxation processes in isoelectronic centers in GaAs, single excitons bound to two nitrogen atoms. Such atomic defects may offer advantageous properties for quantum information applications over the more established quantum dots and NV centers in diamond. Time-resolved spectroscopy is coupled with a unique analytical model.